pa ra m et er sy m bo l un it maximum repetitive peak reverse v oltage maximum rms v oltage maximum dc blocking v oltage maximum a verage forward rectified current o 0.375"(9.5mm) lead length @t a =55 c peak forward surge current, 8.3ms single half sine-wave superimposed on rated load (jedec method) maximum instantaneous forward v oltage @1.0a maximum dc reverse current at rated operating t emperature range storage ttemperature range o t a =25 c dc blocking voltage per element t ypical junction capacitance (note 1) t ypical thermal resistance (note 2) 50 35 50 v rrm v rms v dc i (a v) i fsm v f i r c j r ja t j t stg 1.0 30 5.0 50 15 60 -55 ~ +150 -55 ~ +150 v v v a a v p f o c o c a o c/w notes: 1. measured at 1.0mhz and applied reverse v oltage of 4.0v dc. 2 2. thermal resistance from junction to terminal 6.0mm copper pads to each terminal. v oltage: 50 to 1000 v current: 1.0 a rohs device d i m e n s i o n s i n i n c h e s a n d ( m i l l i m e t e r ) d o - 4 1 features -low cost construction. -fast forward voltage drop. -low reverse leakage. -high forward surge current capability . o -high soldering temperature guarantee: 260 c/10 seconds, 0.375(9.5mm) lead length at 5lbs(2.3kg) tension. mechanical data -case: transfer molded plastic, do-41 -epoxy: ul 94v -0 rate flame retardant -polarity: indicated by cathode band -lead: plated axial lead, solderable per mil-std- 202e, method 208c -mounting position: any -w eight: 0.012ounce, 0.33 grams 100 70 100 200 140 200 400 280 400 600 420 600 800 560 800 1000 700 1000 1n4001-g thru. 1n4007-g page 1 qw -bg013 general purpose silicon rectifiers rev :a comchip t echnology co., l td. 0 . 2 0 5 ( 5 . 2 0 ) 1 . 0 ( 2 5 . 4 0 ) m i n . 0. 10 7( 2. 70 ) 0.0 34 (0 .90 ) 0.0 28 (0 .70 ) 0. 08 0( 2. 00 ) 0 . 1 6 0 ( 4 . 2 0 ) 1 . 0 ( 2 5 . 4 0 ) m i n . 1.1 30 -g 4001 1n -g 4002 1n -g 4003 1n -g 4004 1n -g 4005 1n -g 4006 1n -g 4007 1n o t a =100 c maximum full load reverse current,full cycle average 0.375(9.5mm)lead length at t l =75 c o i r(a v) a electrical characteristics (at t a=25c unless otherwise noted) ratings at 25c ambient temperature unless otherwise specified. single phase, half wave, 60hz, resistive or inductive load. for capacitive load derate current by 20%.
page 2 qw -bg013 general purpose silicon rectifiers rev :a comchip t echnology co., l td. rating and characteristic curves ( 1n4001 ) -g thru. 4007-g 1n fig.2 maximum. non-repetitive peak forward surge current 0 f s m , p e a k f o r w a r d s u r g e c u r r e n t ( a ) number of cycles at 60hz 1 fig.1 t ypical forward current derating curve i ( a v ) , a v e r a g e f o r w a r d c u r r e n t ( a ) o t a , ambient t emperature ( c) 0 2 5 7 5 1 7 5 fig.3 t ypical instantaneous forward characteristics 0 . 0 1 i f , i n s t a n t a n e o u s f o r w a r d c u r r e n t ( a ) v f , instantaneous forward v oltage (v) 1 . 0 0 . 6 1 . 0 1 . 4 0 0 . 6 1 . 0 1 . 6 2 . 0 1 0 0 1 5 3 5 1 . 2 0 . 1 fig.4 t ypical reverse characteristics 0 . 0 1 i r , i n s t a n t a n e o u s r e v e r s e c u r r e n t ( m a ) percent of peak reverse v oltage (%) 1 . 0 1 0 0 . 1 1 0 0 1 2 5 0 . 4 0 . 8 0 . 8 1 . 8 fig.5 t ypical junction capacitance 1 0 c j , c a p a c i t a n c e ( p f ) v r , reverse v oltage (v) 1 0 0 0 . 1 1 0 1 0 0 1 0 5 0 1 5 0 0 . 2 1 0 5 1 0 2 5 3 0 1 . 2 0 4 0 8 0 1 0 0 1 4 0 2 0 1 2 0 6 0 1 single phase half wave, 60hz resistive or inductive load 2 0 8.3ms, single half sine-wave, jedec method. t j =t jmax 1 0 o t j =100 c t j =25 o c f=1mhz o t j =25 c 2 0 5 0 2 5 pulse width=300 s. 1% duty cycle o t j =25 c
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